4-99 up to 6 ghz low noise silicon bipolar transistor chip technical data features ? low noise figure: 1.6 db typical at 2.0 ghz 3.0 db typical at 4.0 ghz ? high associated gain: 14.5 db typical at 2.0 ghz 10.5 db typical at 4.0 ghz ? high gain-bandwidth product: 9.0 ghz typical f t AT-41400 chip outline description hewlett-packards AT-41400 is a general purpose npn bipolar transistor chip that offers excel- lent high frequency performance. the 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. the 14 emitter finger interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power appli- cations. this device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the vhf, uhf, and microwave frequencies. an optimum noise match near 50 w at 1 ghz , makes this device easy to use as a low noise amplifier. the AT-41400 bipolar transistor is fabricated using hewlett-packards 10 ghz f t self-aligned-transistor (sat) process. the die is nitride passivated for surface protection. excellent device uniformity, performance and reliability are produced by the use of ion- implantation, self-alignment techniques, and gold metalization in the fabrication of this device. 5965-8922e
4-100 AT-41400 absolute maximum ratings absolute symbol parameter units maximum [1] v ebo emitter-base voltage v 1.5 v cbo collector-base voltage v 20 v ceo collector-emitter voltage v 12 i c collector current ma 60 p t power dissipation [2,3] mw 500 t j junction temperature c 200 t stg storage temperature c -65 to 200 thermal resistance [2,4] : q jc = 95 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t mounting surface = 25 c. 3. derate at 10.5 mw/ c for t mounting surface > 153 c. 4. the small spot size of this tech- nique results in a higher, though more accurate determination of q jc than do alternate methods. see measurements section thermal resistance for more information. part number ordering information part number devices per tray AT-41400-gp4 100 note: for more information, see tape and reel packaging for semiconductor devices. electrical specifications, t a = 25 c symbol parameters and test conditions [1] units min. typ. max. |s 21e | 2 insertion power gain; v ce = 8 v, i c = 25 ma f = 2.0 ghz db 12.0 f = 4.0 ghz 6.5 p 1 db power output @ 1 db gain compression f = 2.0 ghz dbm 19.0 v ce = 8 v, i c = 25 ma f= 4.0 ghz 18.5 g 1 db 1 db compressed gain; v ce = 8 v, i c = 25 ma f = 2.0 ghz db 15.0 f = 4.0 ghz 10.5 nf o optimum noise figure: v ce = 8 v, i c = 10 ma f = 1.0 ghz db 1.3 f = 2.0 ghz 1.6 f = 4.0 ghz 3.0 g a gain @ nf o ; v ce = 8 v, i c = 10 ma f = 1.0 ghz db 18.5 f = 2.0 ghz 14.5 f = 4.0 ghz 10.5 f t gain bandwidth product: v ce = 8 v, i c = 25 ma ghz 9.0 h fe forward current transfer ratio; v ce = 8 v, i c = 10 ma 30 150 300 i cbo collector cutoff current; v cb = 8 v m a 0.2 i ebo emitter cutoff current; v eb = 1 v m a 1.0 c cb collector base capacitance [2] : v cb = 8 v, f = 1 mhz pf 0.17 notes: 1. rf performance is determined by packaging and testing 10 devices per wafer . 2. for this test, the emitter is grounded.
4-101 AT-41400 typical performance, t a = 25 c frequency (ghz) figure 1. noise figure and associated gain vs. frequency. v ce = 8 v, i c = 10ma. gain (db) i c (ma) figure 2. optimum noise figure and associated gain vs. collector current and collector voltage. f = 2.0 ghz. gain (db) 0 1020 3040 figure 3. optimum noise figure and associated gain vs. collector current and frequency. v ce = 8 v. 10 v 10 v 4 v 4 v frequency (ghz) figure 5. insertion power gain, maximum available gain and maximum stable gain vs. frequency. v ce = 8 v, i c = 25 ma. g a (db) 0.1 0.5 0.3 1.0 3.0 6.0 i c (ma) gain (db) i c (ma) figure 4. output power and 1 db compressed gain vs. collector current. v ce = 8 v. 24 20 16 12 8 4 g 1 db (db) p 1 db (dbm) 0 1020 3040 p 1db g 1db 24 21 18 15 12 9 6 3 0 8 6 4 2 0 nf (db) 4 3 2 1 nf o (db) 0.5 2.0 1.0 3.0 4.0 5.0 16 15 14 13 12 g a g a nf o nf o g a nf o nf 50 6 v 6 v 0 1020 3040 2.0 ghz 2.0 ghz 4.0 ghz 4.0 ghz 6 4 2 0 nf o (db) 16 14 12 10 8 2.0 ghz 2.0 ghz 4.0 ghz 4.0 ghz i c (ma) figure 6. insertion power gain vs. collector current and frequency. v ce = 8 v. 20 16 11 8 4 0 |s 21e | 2 gain (db) 0 1020 3040 1.0 ghz 2.0 ghz 4.0 ghz 40 35 30 25 20 15 10 5 0 msg mag |s 21e | 2
4-102 AT-41400 typical scattering parameters, common emitter, z o = 50 w , t a =25 c, v ce =8 v, i c = 10 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 .73 -39 28.3 25.84 159 -39.2 .011 75 .94 -12 0.5 .60 -121 22.2 12.91 113 -30.2 .031 48 .61 -28 1.0 .57 -156 17.2 7.27 94 -28.0 .040 51 .50 -25 1.5 .56 -172 13.7 4.84 84 -26.4 .048 59 .47 -25 2.0 .57 176 11.4 3.71 77 -24.9 .057 66 .46 -24 2.5 .57 170 9.5 2.97 71 -23.6 .066 69 .46 -26 3.0 .60 164 8.0 2.52 64 -22.3 .077 72 .45 -28 3.5 .60 157 6.8 2.18 61 -20.9 .090 77 .47 -29 4.0 .61 152 5.5 1.89 55 -20.1 .099 79 .47 -30 4.5 .63 147 4.7 1.72 51 -18.7 .116 81 .47 -36 5.0 .63 144 3.7 1.53 46 -17.8 .129 80 .48 -40 5.5 .65 139 3.1 1.42 42 -17.0 .141 82 .49 -44 6.0 66 136 2.1 1.28 38 -16.1 .156 83 .50 -47 AT-41400 typical scattering parameters, common emitter, z o = 50 w , t a =25 c, v ce =8 v, i c = 25 ma freq. s 11 s 21 s 12 s 22 ghz mag. ang. db mag. ang. db mag. ang. mag. ang. 0.1 .56 -60 31.8 39.07 152 -40.9 .009 69 .87 -18 0.5 .54 -145 23.5 15.00 104 -32.8 .023 56 .49 -28 1.0 .54 -170 18.1 8.03 90 -29.6 .033 65 .42 -23 1.5 .55 179 14.5 5.30 82 -26.9 .045 72 .41 -22 2.0 .56 170 12.1 4.04 76 -24.7 .058 75 .41 -23 2.5 .56 165 10.2 3.24 72 -23.1 .070 78 .40 -23 3.0 .58 159 8.8 2.75 65 -21.6 .083 79 .40 -25 3.5 .59 154 7.5 2.37 62 -20.4 .096 82 .41 -26 4.0 .60 149 6.3 2.06 57 -19.3 .108 83 .42 -28 4.5 .61 145 5.4 1.87 53 -18.1 .124 84 .42 -33 5.0 .62 142 4.5 1.67 49 -17.3 .136 83 .43 -36 5.5 .64 137 3.8 1.54 44 -16.5 .150 85 .42 -40 6.0 .65 134 2.9 1.40 41 -15.7 .165 84 .44 -45 a model for this device is available in the device models section. AT-41400 noise parameters: v ce = 8 v, i c = 10 ma freq. nf o g opt ghz db mag ang r n /50 0.1 1.2 .12 3 0.17 0.5 1.2 .10 15 0.17 1.0 1.3 .06 27 0.16 2.0 1.6 .24 163 0.16 4.0 3.0 .52 -153 0.18
4-103 AT-41400 chip dimensions 250 m 9.8 mil 30 m 1.18 mil 250 m 9.8 mil emitter pad base pad dia 90 m 3.54 mil note: die thickness is 5 to 6 mil.
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